Extensions of Models for Transistor Failure Probability Due to Neutron Fluence.

Abstract

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow nonzero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1978
Accession Number
ADA054439

Entities

People

  • George A. Ausman Jr.
  • Joseph V. Michalowicz

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Materials and Manufacturing Processes
  • Space

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Databases
  • Department Of Defense
  • Electronic Equipment
  • Electronics
  • Information Science
  • Navy
  • Probability
  • Probability Density Functions
  • Probability Distributions
  • Radiation
  • Random Variables
  • Standards
  • Statistics
  • Transistors
  • Voltage Regulators
  • Warfare

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Computational Modeling and Simulation
  • Nuclear and Radiation Engineering.