Studies of Indium-Doped Silicon
Abstract
The objectives of this program are to obtain a better understanding of the properties of indium acceptors in silicon, and to develop a new growth procedure which will yield better quality material than is possible by conventional melt-growth techniques. During this program the feasibility of growing indium-doped silicon by the gradient-transport solution growth process was demonstrated. Eight crystals have been grown over the 1000 C to 1300 C temperature range to determine the Si-In solidus curve. The maximum solubility of indium in silicon was determined to be 1.6 x 10 to the 18th power/cc from these measurements. The peak absorption coefficient due to the indium was found to be 1/82 cm in the crystal grown at 1300 C. Effective mass-like spectra due to shallower acceptors in both indium and aluminum-doped silicon have been observed for the first time. The spectra corresponds to the indium:X defect at 112.8 meV and to the aluminum: X defect at 56.3 meV. Deep level transient capacitance spectroscopy (DLTS) has been used to measure the trapping parameters of indium acceptors. The capture cross section for holes by the indium centers has been determined to be greater than 10 to the -13th power sq. cm. at 65K from these measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1978
- Accession Number
- ADA054479
Entities
People
- C. E. Jones
- M. W. Scott
- R. J. Hager
Organizations
- Honeywell International, Inc.