Amorphous-Semiconductor Junction Effects.

Abstract

Heterojunctions between amorphous semiconductors and crystalline semiconductors have been investigated in detail. In particular, chalcogenide-glass/n-Si, chalcogenide-glass/p-Si, chalcogenide-glass/a-Si, and chalcogenide glass/n-GaAs heterojunctions were fabricated and analyzed. Band models which explain the electronic and optical behavior have been derived. It was shown that these band models remain valid when the chalcogenide glasses are switched into the on state. A transistor was fabricated in which the glass served as the emitter. The current gain increases by a factor of about 1000 when the glass is switched. These results together with pulse studies resulted in a complete analysis of the threshold switching and recovery processes. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 10, 1978
Accession Number
ADA054647

Entities

People

  • David Adler

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Bipolar Junction Transistors
  • Carrier Mobility
  • Chalcogenide Glass
  • Conductivity
  • Electrical Engineering
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Engineering
  • Glass
  • Heterojunctions
  • Materials
  • Mobility
  • Optical Materials
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computer Networking
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene