III-V Heterojunction Structures for Long-Wavelength Injection Laser

Abstract

Several double heterostructure injection lasers were fabricated from vapor-grown InGaAs P/InP. Laser wavelength was 1.4 micrometer. The lowest threshold current density observed was 2385 A/sq.cm. The etching characteristics of bromine-methanol-phosphoric acid solutions on InP were tabulated.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA054670

Entities

People

  • C. J. Nuese
  • G. H. Olsen
  • M. Ettenberg
  • R. E. Enstrom

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acids
  • Argon Lasers
  • Current Density
  • Electrical Properties
  • Electronics
  • Emission
  • Heterojunctions
  • Laser Resonators
  • Lasers
  • Long Wavelengths
  • Measurement
  • New Jersey
  • Phosphoric Acids
  • Quantum Efficiency
  • Substrates
  • Thickness
  • Vapor Deposition

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers