Study of Electronic Transport and Breakdown in Thin Insulating Films
Abstract
Recent progress is reported in an ongoing program of studies of high- field effects in thin insulating films on semiconducting substrates. The investigations reported here include the high-field generation of electron traps in SiO2, the high field generation of interface states in the Si-SiO2 system, the influence of holes at the interface and the effects of temperature on interface-state generation in the Si-SiO2 system, and studies of high-field effects in the Si-Al2O3 system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1977
- Accession Number
- ADA054984
Entities
People
- Walter C. Johnson
Organizations
- Princeton University