Characterization of High Power GaAs Lasers.
Abstract
High power, cryogenically operated, dual cavity, ternary heterostructure, GaAs lasers are characterized under CW and 25 MHz RF current modulation conditions. The CW characteristics that are measured include: power, spectral, spatial, and temporal characteristics. It is calculated that degradation of one cavity will cause complete laser failure when the laser is operated near maximum rated drive current due to the dual cavity structure of these devices. RF current modulation at 25 MHz causes the lasers to fail within a few hours, although the same lasers exhibited stable operation under CW drive conditions. It is postulated that the piezoelectric effect in the GaAs material causes the rapid degradation, but further refinements in the calculation of the shear force present in the GaAs material is needed before definite conclusions can be made. The increase in the average output power of the GaAs lasers, operated with RF current modulation, is empirically related to the AC input power of the signal, but the mechanism by which this can occur is not understood. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1977
- Accession Number
- ADA055419
Entities
People
- Daniel J. Murawinski
Organizations
- Air Force Institute of Technology