Mechanisms for Amorphous State Formation in Ion Implanted Silicon.

Abstract

A summary is given of the results obtained on this grant. Various experiments were performed to better understand the mechanisms which are important to the crystalline to amorphous transformation produced by ion implantation. From these experiments have emerged several important concepts and processes. These have been reported in several publications and talks, and it has been possible to interpret the results in terms of a composite model for the amorphization transformation.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA055480

Entities

People

  • Edward B. Hale

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Composite Materials
  • Dose Rate
  • Electron Spin Resonance
  • Energy
  • High Energy
  • Implantation
  • Integrated Circuits
  • Ion Implantation
  • Materials
  • Missouri
  • Radiation
  • Resonance
  • Semiconductor Devices
  • Semiconductors
  • Spin Resonance
  • Universities

Readers

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