Radiation Effects on MOS/SOS Semiconductor Devices.

Abstract

Measurement have been made on radiation induced leakage currents in MOS/SOS structures and the effects of optical bleaching and further irradiation under zero bias conditions have been studied. In order to understand the role played by bulk traps in Al2O3 in the radiation induced leakage currents and to identify the possible lattice defects associated with these traps, Thermally Stimulated Current Techniques have been employed on samples of single crystal Al2O3 from various sources. Optical bleaching and trap repopulation studies have been made in conjunction with the thermally stimulated current measurements. A review of data on trapping states in Al2O3 is presented and models for the trapping and charge compensation processes involved in the back channel leakage are discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA055925

Entities

People

  • B. S. H. Royce

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Aircrafts
  • Aluminum Oxides
  • Chemical Reactions
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffusion Coefficient
  • Electrons
  • Impurities
  • Ionizing Radiation
  • Materials
  • Measurement
  • Optical Absorption
  • Optical Properties
  • Point Defects
  • Transistors
  • X Rays

Fields of Study

  • Physics

Readers

  • Information Retrieval
  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics