Radiation Effects on MOS/SOS Semiconductor Devices.
Abstract
Measurements have been made on radiation induced leakage currents in MOS/SOS structures and the effects of optical bleaching and further irradiation under zero bias conditions have been studied. In order to understand the role played by bulk traps in Al2O3 in the radiation induced leakage currents and to identify the possible lattice defects associated with these traps. Thermally Stimulated Current Techniques have been employed. Optical bleaching and trap repopulation studies have been made in conjunction with the thermally stimulated current measurements. A review of data on trapping states in Al2O3 is presented and models for the trapping and charge compensation processes involved in the back channel leakage are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1978
- Accession Number
- ADA056005
Entities
People
- B. S. H. Royce
Organizations
- Princeton University