Ion Implantation of Wide Bandgap Semiconductors.

Abstract

The principle dopant studied under this contract is Si (n-type). Topics covered in this report include: (1) encapsulation technology; (2) transferability of Si implantation technology using plasma-deposition 'silicon nitride' encapsulation; and (3) problems associated with performing channeling into (110) crystal axes of a (100)-oriented GaAs wafer. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA056125

Entities

People

  • C. L. Anderson
  • C. L. Ramiller
  • H. L. Dunlap

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Crystal Structure
  • Digital Data
  • Electron Mobility
  • Electrons
  • Encapsulation
  • Energy Levels
  • Films
  • Flow
  • Flow Rate
  • Implantation
  • Ion Beams
  • Ion Implantation
  • Measurement
  • Mechanical Properties
  • Silicon Compounds
  • Standards

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene