Time Dependent Electron and Ion Flow in Pinched Beam Diodes.

Abstract

The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then used to compare calculated diode current with actual measured values, and good agreement is found. The code is also used to study dynamic pinch formation and ion current generation. A focusing model for the ions is presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1978
Accession Number
ADA056362

Entities

People

  • Roswell Lee
  • Shyke A. Goldstein

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Aspect Ratio
  • Computer Simulations
  • Computers
  • Corporations
  • Current Density
  • Demographic Cohorts
  • Dynamics
  • Electric Fields
  • Electromagnetic Fields
  • Electron Beams
  • Emission
  • Geometry
  • Magnetic Fields
  • Navy
  • Simulations
  • Test And Evaluation
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics