Integrated Injection Logic (I2L). Comparative and Design Trade-Off Evaluation.

Abstract

Electrical parameters and radiation susceptibility of integrated injection logic (I2L) microcircuit circuit technology are reviewed. Comparisons are drawn between I2L and other contemporary LSI microcircuit technologies such as TTL, Schottky-clamped TTL, ECL, p-MOS, n-MOS, CMOS and CMOS/SOS. Performance parameters considered include cell density, switching speed, power dissipation, speed-power product, output drive capability and temperature range. Radiation effects considered are those of neutron damage, long-term ionization damage, electrical pulsed overstress damage and transient photoresponse. Trade-offs in electrical performance parameters and radiation susceptibility are suggested for 'conventional' I2L design. Critical design considerations in I2L are electrical switching response, noise margin and neutron damage susceptibility. On the other hand, I2L is of potential major advantage in the parameters of power dissipation, temperature range, long-term ionization damage susceptability and transient photoresponse. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 07, 1976
Accession Number
ADA056392

Entities

People

  • James P. Raymond

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Films
  • Geometry
  • Hardness
  • Ionization
  • Jet Propulsion
  • Materials
  • Npn Transistors
  • Radiation Effects
  • Semiconductors
  • Standards
  • Transistor Transistor Logic
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Life Cycle Cost Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics