Auger Spectra of Silicon Dioxide Surface Defect Centers,
Abstract
It is shown that Auger electron spectroscopy can reveal the absolute energy level, with respect to the valence band edge, of Si dangling bond electrons in silicon dioxide. A theoretical model is proposed, and the Auger Electron distribution N(E) for the LVV transition band is calculated for a stoichiometric silicon dioxide surface, and for a silicon oxide surface with unpaired, dangling bond electrons. The latter is characterized by an additional LVD transition band, where D is the energy level of the unpaired electron. The theoretical N(E) curves are compared with experimental N(E) curves for a pristine, and for an electron radiation damaged quartz surface. Good agreement with the theoretical model is obtained, if D is assumed to lie 7.2 eV above the valence band edge. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1978
- Accession Number
- ADA056441
Entities
People
- Klaus Schwidtal
Organizations
- United States Army Communications-Electronics Command