High-Speed Electron-Beam Lithographic Resists for Micron and Submicron Integrated Circuits,

Abstract

Next-generation RADAR and ELINT systems are planned to provide the field commander with comprehensive intelligence on the disposition of enemy weapons and electronics equipment. Ultra-compact signal processors with unprecedented capabilities are the heart of these systems. Fabrication of the required high-density integrated circuits (IC's), with elements in the micron to submicron range, is beyond the resolution limit of state-of-the-art optical photolithography. Electrons with 10-20 keV energies can be accurately focused to beam diameters much less than a micron. Electron-beam lithography (EBL) meets the projected resolution requirements, and is expected to be a key technology for the production of sophisticated new digital communications systems for the Army.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1978
Accession Number
ADA056446

Entities

People

  • Charles C. Cook Jr.
  • Edward H. Poindexter
  • John N. Helbert

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Circuits
  • Diameters
  • Digital Communications
  • Electron Beam Lithography
  • Electron Beams
  • Electronic Equipment
  • Electronics
  • Electrons
  • Fabrication
  • High Density
  • Integrated Circuits
  • Lithography
  • Lithography (Fabrication)
  • Photolithography
  • Production
  • Scanning

Fields of Study

  • Physics

Readers

  • Geospatial Intelligence and Artificial Intelligence Analytics
  • Nanofabrication and Microfabrication.
  • Research Science/Academic Research

Technology Areas

  • Directed Energy
  • Microelectronics