IC Fabrication Using Electron-Beam Technology.

Abstract

Continuity and integrity of electron beam resist films under device processing conditions can control the functional yield of integrated circuits fabricated using electron-beam technology. This report describes several electrical and optical evaluations of oxide pinhole density related to process induced defects in PBS and TI-313 electron resist films. Such pinholes are believed to be the cause of the zero functional yield observed on first lots of 256-bit bipolar RAM circuits fabricated with PBS resist. Results of these comparative tests indicate that the TI-313 electron resist and associated processing gives significantly better film continuity and step coverage then the PBS, being comparable to commercially available photoresist. It is thus concluded that implementation of the TI-313 electron resist technology into the process sequence already established will permit fabrication of working 256-bipolar RAM circuits in the immediate future. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1978
Accession Number
ADA056717

Entities

People

  • George A. Brown
  • Gilbert L. Varnell
  • John L. Bartelt
  • Ronald A. Williamson
  • Terry L. Brewer

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Capacitors
  • Circuit Testers
  • Circuits
  • Data Analysis
  • Electrical Measurement
  • Electron Beams
  • Fabrication
  • Integrated Circuits
  • Materials
  • Measurement
  • Microscopes
  • Oxide Films
  • Oxides
  • Probability
  • Semiconductor Manufacturing
  • Short Circuits
  • Standards

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene