Electro-Optical Studies.

Abstract

The near band edge photocurrent structure of Class I CdS crystals was investigated near 77 K and 295 K by use of double beam illumination techniques. Changes in the photocurrent structure as a consequence of heat treatment, infra-red illumination and oxygen backfill were measured. At 98 K, quenching of the photocurrent near 5000 A observed in a virgin crystal changed into photocurrent maxima after heat treatment to 175 C. At room temperature, the near band edge quenching remained even after heat treatment to 175 C. Visible and infra-red excitation ranging from 0.6 to 1.5 micrometers always strongly quenched the near band edge photoconductivity maxima but had considerably less influence on the intrinsic photocurrent. The currently-used model to explain Class I properties is expanded to include the influence of the space-charge region in which the photocurrent flows and an acceptor-level with multiply charged energy states. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA057062

Entities

People

  • K. W. Boeer

Organizations

  • University of Delaware

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conduction Bands
  • Desorption
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Heat Energy
  • Heat Treatment
  • Measurement
  • Optical Properties
  • Phase Transformations
  • Photoconductivity
  • Semiconductors
  • Single Crystals
  • Solar Cells
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Spectroscopy.

Technology Areas

  • Space
  • Space - Hall-Effect Thruster