Charged-Coupled Scanned IR Imaging Sensors
Abstract
This program was directed at fabricating infrared focal planes consisting of Schottky-barrier detectors multiplexed by charge-coupled shift registers, and demonstrating their imaging capability against 300K background radiation. Three devices were designed and fabricated: a 64-bit, three-phase line-array with transfer gaps, a 62-bit line array, and a 25x50 area array, the latter two with four-phase, sealed-channel, overlapping-gate, double-polysilicon structure. The detectors were palladium silicide and platinum silicide on p- silicon. Fabrication involved only standard silicon-processing operations. Excellent agreement has been obtained between calculated infrared performance and experimental data. Detector uniformity better than 1%, already achieved with palladium silicide, is adequate for staring-mode thermal imagers. These sensors make possible imagers with thermal resolution on the order of tenths of a degree C, and production costs less than present scanned systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA057115
Entities
People
- Elliott S. Kohn
- Frank V. Shallcross
- Walter F. Kosonocky
Organizations
- Sarnoff Corporation