Growth of High-Quality Cesium Dideuterium Arsenate Crystals.
Abstract
The growth of cesium dideuterium arsenate (CsD2AsO4) crystals from aqueous and mixed solvent systems was studied, with emphasis on the problems of tapering and flawing. Fluid flow, seed orientation, deuteration, impurities, pH and saturation temperature had negligible effects on taper. An empirical process for growing taper-free CsD2AsO4 was developed. This process consists of initial capping of a seed plate in D2O solvent followed by growth of the capped seed in a D2O/glycol solvent. The optical absorption, 90 degree phase-matching temperature, and thermal stability of CsD2AsO4 as a function of deuteration were determined. A high-temperature (409 K), destructive, phase transition was discovered in CsD2AsO4. As a result, a compromise between optical absorption and the 90 degree phase-matching temperature must be made. Six crystals were characterized and delivered. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1976
- Accession Number
- ADA057131
Entities
People
- G. M. Loiacono
- M. Delfino
- W. N. Osborne