Annealing Studies of Beryllium in Gallium Arsenide and Gallium Arsenide Phosphide.

Abstract

Differential resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), and low temperature (5 K) photoluminescence are utilized to study the annealing behavior of ion-implanted beryllium in GaAs and GaAs(0.6)P(0.4), and of beryllium incorporated in GaAs during growth by molecular beam epitaxy (MBE). (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1977
Accession Number
ADA057645

Entities

People

  • William Victor Mclevige

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffusion Coefficient
  • Energy
  • Epitaxial Growth
  • Heat Energy
  • Ion Implantation
  • Ions
  • Mass Spectrometry
  • Measurement
  • Molecular Beam Epitaxy
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors
  • Spectrometry

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics