Silicon Detector Compensation by Nuclear Transmutation.
Abstract
The effects of nuclear transmutation doping in high quality detector grade silicon have been studied. A theoretical treatment of the variations of electrical parameters with fluence and the experimental isochronal annealings of float zone Si, transmutation doped are presented. It is found that several annealing stages observed previously only in Czochralski Si are also observed in this lightly compensated float zone Si. A large concentration of acceptors is produced as a result of thermal irradiation and annealing to 500 C. This concentration is independent of fluence and appears to be related to residual Si impurities previously undetected by electrical, optical or neutron activation analysis experiments. Defect decoration of oxygen or carbon impurities is believed to be the source of these acceptors. Techniques have been devised to produce very high resistivities as a result of high precision nuclear transmutation compensation in nominally undoped material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1978
- Accession Number
- ADA057786
Entities
People
- J. M. Meese