Compressive Strength and Indentation Damage in Ceramic Materials.

Abstract

The extent of the plastically deformed region associated with indentation in silicon carbide is determined by means of selected area electron channeling. It is found that the extent of the plastic zone beneath an indent is quite large, i.e., equal to about five times the impression radius. Microcrack formation is studied in the SEM, and the combined results are discussed in terms of current elastic-plastic indentation fracture models. The first cracks to form are radial microcracks; their morphology, and the observed indentation plastic zone dimensions, support the elastic-plastic model of Perrott for indentation cracking in alpha-SiC. In addition, scanning electron microscopy and acoustic emission have been used to characterize the microfracture mechanisms responsible for the temperature-sensitive compressive strength behavior of polycrystalline Al2O3 and alpha-SiC. It is determined that the early stages of damage can be related to the presence or absence of microplasticity, depending upon the ceramic. Further, local plastic flow in alpha-SiC is clearly observed to commence during compression at temperatures as low as 500 C, and at stresses not much greater than the tensile strength.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1978
Accession Number
ADA057790

Entities

People

  • David L. Davidson
  • James Lankford Jr.

Organizations

  • Southwest Research Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Acoustic Emissions
  • Aluminum Oxides
  • Carbides
  • Ceramic Materials
  • Compressive Strength
  • Crystal Structure
  • Electron Microscopy
  • Emission
  • Low Temperature
  • Materials
  • Microscopy
  • Plastic Flow
  • Plastic Properties
  • Scanning Electron Microscopy
  • Silicon Carbide
  • Strain Rate
  • Tensile Strength

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Polymer Science and Engineering.

Technology Areas

  • Microelectronics