Polyacetylene, (CH) sub x:n-Type and p-Type Doping and Compensation.

Abstract

A series of experiments are reported which demonstrate that donors or acceptors can dope polyacetylene to n-type or p-type respectively, and that the two kinds of dopants can compensate one another. The formation of a rectifying p-n junction is demonstrated. The results suggest the possibility of utilizing doped polyacetylene in a variety of potential semiconductor device applicatons. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 04, 1978
Accession Number
ADA058372

Entities

People

  • A. G. Macdiarmid
  • C. K. Chiang
  • C. R. Fincher Jr.
  • S. C. Gau
  • Y. W. Park

Organizations

  • University of Pennsylvania

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • California
  • Chemistry
  • Conductivity
  • Electrical Conductivity
  • Electron Transfer
  • Engineering
  • Materials
  • Materials Engineering
  • Materials Science
  • Military Research
  • New York
  • P-N Junctions
  • Polymeric Films
  • Polymers
  • Semiconductor Devices
  • Semiconductors
  • United States

Readers

  • Semiconductor Device Technology
  • Underwater engineering and Marine Technology.

Technology Areas

  • Microelectronics