Temperature and Current Dependence of Degradation in Red-Emitting GaP LEDS.

Abstract

Experimental studies have been performed on several aspects of the degradation of electroluminescent quantum efficiency in Zn,O-doped GaP light emitting diodes. The dependence of degradation on stress temperature, stress current (experienced during accelerated aging) and measurement current (at which quantum efficiency is evaluated) has been empirically determined from experiments on several lots of devices. It is shown that degradation is dominated by a decrease in bulk p-side radiative recombination efficiency. The degradation of other factors (such as injection efficiency and injection ratio) contributing to the overall electroluminescent efficiency has only a secondary effect. Moreover, it is shown empirically that the dependences of degradation on temperature and stress current are separable. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1978
Accession Number
ADA058538

Entities

People

  • J. M. Ralston
  • J. W. Mann

Organizations

  • Center for Naval Analyses

Tags

Communities of Interest

  • Energy and Power Technologies
  • Human Systems

DTIC Thesaurus Topics

  • Applied Mathematics
  • Business Administration
  • Diodes
  • Equations
  • Heat Of Activation
  • Information Science
  • Management Personnel
  • Manpower
  • Materials
  • Measurement
  • New York
  • Operations Research
  • Organizational Structure
  • P-N Junctions
  • Physics
  • Quantum Efficiency
  • Statistics

Fields of Study

  • Engineering

Readers

  • Human-Computer Interaction (HCI).
  • Mechanical Engineering/Mechanics of Materials.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Quantum Computing