Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.
Abstract
This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO2; (6) Electrical characteristics of Pd2Si; and (7) A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform thickness and composition.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1978
- Accession Number
- ADA058772
Entities
People
- James W. Mayer
- Marc-a. Nicolet
Organizations
- California Institute of Technology