Electrooptical Devices.

Abstract

The current objectives of the electrooptical device program are: (1) to perform life tests on GaInAsP/InP double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3 micro m wavelength region and analyze the degradation mechanisms, and (2) to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region. Room-temperature CW operation of DH GaInAsP/InP stripe-geometry lasers for periods of 1000 to 7000 hr now seems to be routine. At higher temperatures, one mode of degradation has been tentatively identified as being due to increasing thermal resistance of the diode heat-sink contact.

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1978
Accession Number
ADA059062

Entities

People

  • Arthur G. Foyt Jr.
  • Ivars Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Degradation
  • Diodes
  • Electronic Equipment
  • Electronics
  • Geometry
  • Heat Sinks
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Life Tests
  • Optical Equipment
  • Optoelectronic Devices
  • Photodiodes
  • Resistance
  • Thermal Resistance

Readers

  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Directed Energy