1.06-Micron III-V Photocathode Development.

Abstract

The design, fabrication, and initial evaluation of three transferred-electron (field assisted) photocathodes for high performance 1.06-micron detection are reported. 2.7% and 2.8% yields at 1.06 have been achieved from a direct emitter and a hybrid InP/InGaAsP heterojunction cathode, respectively. Feasibility of p-InGaP as a transferred-electron emitter has been demonstrated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA059960

Entities

People

  • J. S. Escher
  • P. E. Gregory
  • R. R. Saxena
  • S. B. Hyder

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Detectors
  • Electron Emission
  • Emission
  • Emitters
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Optical Absorption
  • P-N Junctions
  • Photoexcitation
  • Quantum Efficiency
  • Quantum Yields
  • Scattering
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics