Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

The current papers describe the oxidation of heavily doped silicon, the location of implanted ions in Si02, a light activated storage device (LASD) and exciton model for Si-Si02 interface state generation and electron trapping and photo detrapping on sites related to As implantation in Si02.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA060942

Entities

People

  • C. M. Serrano
  • D. J. Dimaria
  • D. R. Young
  • D. W. Dong
  • E. A. Irene
  • G. Rubloff
  • R. F. Dekeersmaecker
  • W. R. Hunter
  • Z. A. Weingerg

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Capacitance
  • Diameters
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Frequency
  • Ionizing Radiation
  • Measurement
  • Metal Oxides
  • Oxidation
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Standing Waves

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Neuroscience
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics