Theory of Impurity-Shifted Intersubband Transitions in n-Type Inversion Layers on (100) Silicon.

Abstract

Binding energies and variational wave functions are calculated as functions of electric field for electron impurity states split off from electric subbands of (100) silicon and silicon dioxide. The impurity-shifted intersubband transition energies are presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1978
Accession Number
ADA060952

Entities

People

  • G. M. Kramer
  • Richard F. Wallis

Organizations

  • University of California, Irvine

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • California
  • Dioxides
  • Electric Fields
  • Electrons
  • Energy
  • Free Electrons
  • Impurities
  • Inversion
  • Lepidoptera
  • Military Research
  • Potential Energy
  • Semiconductors
  • Silicon
  • Silicon Dioxide
  • Transitions
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene