Heavy Ion Radiation Effects in VLSI,

Abstract

Impressive results have been achieved using electron beam, soft x-ray, or synchrotron radiation for lithography and photoresist exposure. Application to microelectronic circuitry paved the way for Very Large Scale Integration (VLSI) in which device sizes of micron and submicron dimension are forecast. This small size presents new problems for radiation effects test and assessment. One example is the interaction of heavy ions (namely, cosmic rays) with a VLSI size device and the associated nonequilibrium dosimetry involved. This report treats the case of VLSI exposure in satellite environment. The numbers suggest that very small size is not a desirable feature for devices in that environment. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA061116

Entities

People

  • John N. Bradford

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Collisions
  • Cosmic Rays
  • Electron Beams
  • Electron Holes
  • Electron Microscopes
  • Electrons
  • Energy
  • Energy Transfer
  • Large Scale Integration
  • Particles
  • Radiation
  • Radiation Effects
  • Scanning Electron Microscopes
  • Subatomic Particles
  • Very Large Scale Integration
  • X Rays

Fields of Study

  • Physics

Readers

  • Computer Programming and Software Development.
  • Nuclear and Radiation Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster