Radiation Effects on Charge-Coupled Devices and other MOS Structures.

Abstract

This report describes results of radiation effects studies on charge-coupled devices (CCDs) and other MOS structures. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of neutron damage mechanisms in CCDs was performed with emphasis placed on investigation of dark current increases.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1978
Accession Number
ADA061309

Entities

People

  • Joseph. R. Srour
  • Robert A. Hartmann
  • Siegfried Othmer
  • Susan C. Chen

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Air Force
  • Charge Coupled Devices
  • Composite Materials
  • Dose Rate
  • Electron Beams
  • Electron Microscopes
  • Ion Implantation
  • Ionizing Radiation
  • Low Temperature
  • Materials
  • Radiation Effects
  • Scanning Electron Microscopes
  • Semiconductor Devices
  • Semiconductors
  • Signal Generators
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Nuclear and Radiation Engineering.
  • Systems Analysis and Design