Effects of EMP Testing on Semiconductor Long Term Reliability.

Abstract

The objective of this research effort has been to determine the long-term reliability effects of pre-stressing semiconductor devices with EMP-like transients. This study was conducted by subjecting large sample lots (approximately 100 per lot) of the JAN 2N918 transistor and the JAN-TX IN914 diode to these electrical transients at a large and a small fraction of the nominal Wunsch damage level for each device. These pre-stressed devices together with an un-stressed control lot were then life tested at a junction temperature of 300 C for a continuous 1280 hour period. The effects of EMP pre-stressing on the reliability of these devices were then assessed by comparing the observed failure rates of the various sample lots under these accelerated life test conditions. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1977
Accession Number
ADA061456

Entities

People

  • Sherwin R. Kahn

Organizations

  • IIT Research Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Bipolar Junction Transistors
  • Circuit Boards
  • Circuits
  • Distribution Functions
  • Electronics Industry
  • Electronics Laboratories
  • Energy Systems
  • Engineers
  • Failure Mode And Effect Analysis
  • Generators
  • High Temperature
  • Normal Distribution
  • Printed Circuits
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation

Readers

  • Materials Science and Engineering.
  • Optical Fiber Sensing and Electromagnetic Propagation.
  • Software Engineering

Technology Areas

  • Microelectronics