IC Fabrication Using Electron-Beam Technology.

Abstract

A new positive electron resist (TI-313) has been implemented for fabrication of 256-bit bipolar RAMs. This TI-313 resist has allowed plasma etching at each oxide removal step in the process. The pinhole data on this resist after oxide etch is comparable with that measured on the best standard negative photoresists. Previous attempts at fabricating the 256-bit bipolar RAMs have failed due to the high number of defects in the oxide caused by an inherent problem with PBS electron resist during wet etching. In addition, a change was made from the double-level metal 256-bit bipolar RAM (54S300) to the single-level metal 256-bit bipolar RAM (74S301A). This change was made because the TI-Houston production facility was achieving extremely low yields on the 54S200/300 and had discontinued production. These changes should allow fabrication of working devices during the next quarter. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA061460

Entities

People

  • Gilbert L. Varnell
  • Jack Reynolds
  • John L. Bartelt
  • Robert A. Owens
  • Ronald A. Williamson

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Ceramic Materials
  • Classification
  • Cost Reductions
  • Costs
  • Electron Beams
  • Electrons
  • Fabrication
  • Films
  • Manufacturing
  • Materials
  • Metals
  • Production
  • Security
  • Semiconductor Manufacturing
  • Standards
  • Thickness

Readers

  • Integrated Circuit Design and Technology.
  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene