Negativeu states in the Gap in Hydrogenated Amorphous Silicon,

Abstract

We propose that Si-H-Si three center bonds exists in hydrogenated amorphous silicon. These centers give rise to states in the energy gap which have a negative effective electronic correlation energy, U. Our model can explain many of the known properties of this material. We make suggestions about how to obtain materials which may prove useful in electronic device applications.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1978
Accession Number
ADA061499

Entities

People

  • Donald C. Licciardello
  • Ronald Fisch

Organizations

  • Princeton University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Atoms
  • Carrier Mobility
  • Conduction Bands
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Equations
  • Ground State
  • Hydrogen
  • Hydrogen Bonds
  • Materials
  • Military Research
  • Mobility
  • New Jersey
  • Semiconductors
  • Solar Cells

Fields of Study

  • Physics

Readers

  • Emergency Management and Homeland Security.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene