Silicon Nitride Layers on Gallium Arsenide by Low Energy Ion Beam Sputtering.
Abstract
Low energy ion beam sputtering with argon was used to deposit layers of Si3N4 onto GaAs for encapsulation purposes. Mechanical stability to above 900 C has been achieved; silicon diffuses into the GaAs at 600 C and above; index of refraction is a simple, but reliable test of encapsulant quality. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1978
- Accession Number
- ADA061652
Entities
People
- J. R. Sites
- L. E. Bradley
Organizations
- Colorado State University