Electronic Profile of n-InAs on Semi-Insulating GaAs.

Abstract

Electron density and mobility are measured in three regions of InAs epilayers on GaAs substrate: (1) The interfacial layer shows an increase in density and decrease in mobility over a 3 micron distance; (2) the bulk of the epilayer has n approx. 1/10 to the 16th power cc, mu approx. 100000 sq. cm/V-sec; (3) the front surface, accumulated at zero bias, displays surface quantization effects and an enhanced effective mass. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 20, 1978
Accession Number
ADA061685

Entities

People

  • H. A. Washburn
  • H. H. Wieder
  • J. R. Sites

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Compound Semiconductors
  • Crystal Structure
  • Electron Density
  • Electrons
  • Gallium
  • Gallium Arsenides
  • Ground State
  • Ion Beams
  • Magnetic Fields
  • Magnetic Properties
  • Materials
  • Materials Science
  • Measurement
  • Mobility
  • Oscillation
  • Physics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics