IC Fabrication Using Electron-Bean Technology.

Abstract

A New positive electron resist (TI-313) has been implemented for fabrication of 256-bit bipolar RAMs. This TI-313 resist has allowed plasma etching at each oxide removal step in the process. The pinhole data on this resist after oxide etch is comparable with that measured on the best standard negative photoresists. Previous attempts at fabricating the 256-bit bipolar RAMs have failed due to the high number of defects in the oxide caused by an inherent problem with PBS electron resist during wet etching. In addition, a change was made from the double-level metal 256-bit bipolar RAM (54S300) to the single-level metal 256-bit bipolar RAM (74S301A). This change was made because the TI-Houston production facility was achieving extremely low yields on the 54S200/300 and had discontinued production. These changes have allowed fabrication of functional devices during this quarter. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1978
Accession Number
ADA061721

Entities

People

  • Gilbert L. Varnell
  • Jack Reynolds
  • John L. Bartelt
  • Robert A. Owens
  • Roger A. Robbins

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Economic Impact
  • Electron Beams
  • Electrons
  • Fabrication
  • Manpower
  • New Jersey
  • Production
  • Semiconductor Manufacturing
  • Standards

Readers

  • Battery Technology and Engineering
  • Integrated Circuit Design and Technology.
  • Metallurgy

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene