Basic Improvements in Substrate InP Material.

Abstract

Extremely high purity polycrystalline InP was prepared from solution, having background carrier concentration of 4 x 10 to the 14th power/cc and mobility at 77 K greater than 90,000. When this material is used for the growth of undoped single crystal it results in N(D)-N(A) = 1 x 10 to the 15th power/cc and mobility = 53,000. Low temperature PL also indicate both materials to be of extremely high purity. Preliminary results indicate that doping of single crystal InP by Sn, Fe and particularly Zn results in improved defect density. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1978
Accession Number
ADA061873

Entities

People

  • G. A. Antypas

Tags

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Dislocations
  • Electrical Properties
  • High Resolution
  • Low Temperature
  • Materials
  • Military Research
  • Mobility
  • Photoluminescence
  • Polycrystals
  • Scattering
  • Single Crystals
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Spectroscopy.