New Passivation Methods of GaAs.
Abstract
Further detailed ESCA studies are reported on native oxide MOS structures with and without the incorporation of Al2O3. The anodic oxidation of InP was investigated from an electrolyte point of view. The oxide growth mechanism involving electrolytic oxidation of sandwiches of Al and Ge were studied by using GaAs as a substrate. An attempt was made to formulate a simple electrical model of GaAs MOS diodes which fits reasonably well with experimental C-V and G-V characteristics. The development of further GaAs MOS transistors is reported,' in particular charge storage MAOS transistors were measured. Finally, the d.c. emission of white light from thin GaAs MOS structures is reported. The spectral distribution of this emission seems to indicate that either a substantial contribution is obtained by the recombination of electrons and holes in the amorphous oxide (whose energy gap is larger than that of GaAs) or by direct recombination of hot charge carriers in the space charge layer. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1978
- Accession Number
- ADA061954
Entities
People
- A. Colquhoun
- A. F. A. B. El-safti
- B. Bayraktaroglu
- P. A. Breeze
- S. J. Hannah
Organizations
- Newcastle University