Low Temperature Fabrication of High Efficiency Silicon Solar Cells.
Abstract
This report describes the results of a program to develop ion implantation/pulsed energy processing for spacecraft solar cell applications. The approach involves employing pulsed electron beam technology to achieve processing parameters not previously possible by conventional furnace heat treatments. Optimization of the ion implanted solar cell structure was undertaken but not completed. Cells with efficiencies to 13.7% AMO were achieved using furnace annealing and to 12.9% AMO using pulsed electron beam annealing. Prospects for future development to higher efficiencies and for totally automated production are excellent. Experimental evidence suggests that the ion implanted, pulsed electron beam annealed solar cell may have better inherent tolerance to electron irradiation than similar diffused or furnace annealed implanted junction cells. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1978
- Accession Number
- ADA061956
Entities
People
- Allen R. Kirkpatrick
- Anton C. Greenwald
- John A. Minnucci