Research on Long Wavelength Bias-Assisted Photoemitter.

Abstract

Transferred-electron photoemission to 1.7 microns has been achieved for the first time from a Ag/p-In(.53)Ga(.47)As cathode. A peak reflection-mode quantum yield of 1.6% at 1.3 microns was achieved. Measurements of the optical absorption coefficient and photoluminescence spectrum of LPE-grown In(.53)Ga(.47)As/InP(100) samples are presented. Monte Carlo calculations of the energy distributions of photogenerated electrons reaching the emitting surface are also discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1978
Accession Number
ADA062473

Entities

People

  • J. S. Escher

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Conduction Bands
  • Diagrams
  • Electric Fields
  • Electron Emission
  • Electron Energy
  • Electrons
  • Emission
  • Energy Bands
  • Energy Gaps
  • Field Effect Transistors
  • Long Wavelengths
  • Materials
  • Optical Absorption
  • Quantum Yields
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing