Pulsed GaAs Impatt Diode Development.
Abstract
The research and development program entitled 'Pulsed GaAs IMPATT Diode Development' was sponsored by Naval Weapons Center, China Lake, California, to provide an improved high-power solid state pulsed source at a frequency of 14 GHz. These diodes are intended for use in injection-locked solid state transmitters using cavity-type power combiner circuits. The objective of this program was to design, fabricate and evaluate GaAs pulsed IMPATT diodes for generation of microwave energy in Ku-band. High efficiency devices were to be designed to operate at moderate duty cycles, short pulse lengths and to provide the maximum in peak output power.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1978
- Accession Number
- ADA062496
Entities
People
- B. R. Cairns
- J. Kinoshita
- S. I. Long
- T. L. Hierl