Process-Oriented, High-Injection Circuit Models for Integrated Bipolar Junction Transistors. Part II. Volume II.

Abstract

Contents: EQSOLVE (Equation Solver) Program, Sensitivity Curve Sets, PAREV (Parameter Evaluation) Code Listing, Transient Radiation Recovery Characteristics of Bipolar Junction Transistors, and Circuit Model for Neutron-Induced Performance Degradation in Bipolar Junction Transistors.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1978
Accession Number
ADA062790

Entities

People

  • John Choma Jr

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Cyber

DTIC Thesaurus Topics

  • Bandwidth
  • Bipolar Junction Transistors
  • Diffusion
  • Engineering
  • Minority Groups
  • Neutron Bombardment
  • Plastic Explosives
  • Radiation
  • Radiation Effects
  • Resistance
  • Schematic Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Space Systems
  • Test Methods
  • Transistors

Fields of Study

  • Physics

Readers

  • Business Analytics
  • Semiconductor Device Technology