InGaAs Microwave FET.

Abstract

A number of low-noise FET devices have been fabricated using InGaAs active layers grown on GaAs substrates with an intervening graded buffer layer. The In percentages range from 0 to 34%. In spite of velocity degradation at the active layer-buffer layer interface and the use of lower-doped channels, InGaAs is able to match the performance of GaAs. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1978
Accession Number
ADA062798

Entities

People

  • C. K. Nishimoto
  • S. B. Hyder
  • S. G. Bandy
  • T. J. Boyle

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Epitaxial Growth
  • Field Effect Transistors
  • Materials
  • Military Research
  • Modules (Electronics)
  • Plastic Explosives
  • Power Electronics
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Educational Psychology
  • Environmental Impact Assessment (EIA) of Proposed Air Force Base Actions.
  • Integrated Circuit Design and Technology.