Theory of Surface Polaritons in n-Type Silicon in the Presence of a DC Current.
Abstract
A theoretical investigation has been carried out on the effect of a drift current on surface polaritons in n-type silicon. The current direction is taken to be parallel to the direction of propagation of the surface polaritons. From the dispersion curves, there is evidence that an interaction takes place between the current and the polaritons which gives rise to polariton instability or amplification for certain frequency ranges. These instabilities are believed to be due to the presence of the surface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA063097
Entities
People
- A. A. Maradudin
- B. G. Martin
- Richard F. Wallis
Organizations
- University of California, Irvine