Optimization Study of IR-CCD Array.

Abstract

The IR-CCD arrays with platinum silicide Schottky-barrier detectors fabricated under this contract contain a 25x50-element area sensor and a 62-element line sensor. The above devices were processed with two-level polysilicon-gate buried-channel CCD registers for image readout. The platinum silicide detectors were made with implanted n-type guard rings. Such construction resulted in sufficiently low detector dark current at 77 K to allow frame-integration times of 30 to 100 ms. The process optimization included high-temperature sintering of the platinum silicide either at 650 deg for 10 minutes or for 30 minutes followed by a 20-minute hydrogen anneal at 550 C. Devices were also made with low-temperature sintering of platinum silicde at 320 C for 8 h in nitrogen followed by another 8 h in forming gas. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1978
Accession Number
ADA063240

Entities

People

  • E. S. Kohn
  • F. V. Shallcross
  • W. F. Kosonocky

Organizations

  • RCA Corporation

Tags

Communities of Interest

  • Materials and Manufacturing Processes
  • Sensors

DTIC Thesaurus Topics

  • Amplifiers
  • Charge Coupled Devices
  • Connectors
  • Construction
  • Detectors
  • Electronics
  • Fan Blades
  • Generators
  • Guard Rings
  • Heat Treatment
  • Infrared Detectors
  • Measurement
  • Pulse Amplitude
  • Schematic Diagrams
  • Shift Registers
  • Waveform Generators
  • Waveforms

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.