High Temperature Slow Crack Growth in Silicon Carbide.

Abstract

The purpose of this investigation was to identify by survey the probable maximum use temperatures and stress levels for Sintered Alpha Silicon Carbide in expected marine (salt containing) and oxidizing environments as a function of sample surface condition. The results of this survey should be useful to define the areas where more detailed and more statistically significant experiments could be conducted.

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Document Details

Document Type
Technical Report
Publication Date
Dec 18, 1978
Accession Number
ADA063311

Entities

People

  • David E. Schwab
  • David M. Kotchick

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Corrosion
  • Corrosion Resistance
  • Crystal Structure
  • Equations
  • Fracture (Mechanics)
  • Gas Turbines
  • Heat Exchangers
  • Heat Transfer
  • Materials
  • Mechanics
  • Silicon Carbide
  • Strain Rate
  • Surface Properties
  • Turbine Components
  • Turbines

Readers

  • Materials Science (Mechanical Engineering).
  • Psychometric Testing or Psychological Assessment.
  • Surface Engineering/Surface Coating Technology.