Dielectric Layers on III-V Semiconductors.

Abstract

Studies on the electronic profile of InAs epilayers have been completed. The use of ion beam sputtered silicon nitride as an encapsulant has been reported and the project extended to aluminum nitride. A new sputter system has been installed, and details of ion beam sputter damage are being examined. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1978
Accession Number
ADA063332

Entities

People

  • James R. Sites.

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Nitrides
  • Ceramic Materials
  • Colorado
  • Compound Semiconductors
  • Electrons
  • Gallium Arsenides
  • Ion Beams
  • Ions
  • Materials
  • Materials Science
  • Military Research
  • New York
  • North Carolina
  • Physics
  • Semiconductors
  • United States

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene