Contour Mapping of Detector Arrays.
Abstract
The anomalous behavior of the extrinsic silicon infrared detectors operating at very low temperatures under very low background photon-flux conditions has been extensively reported. A recent theoretical investigation of Ludman and Silverman addressed the anomalous behavior of these detectors near the contact region. The ohmic contacts to these silicon detectors can be considered as high-low junction contacts. The theory then investigates the variations in the detector responsivity near the contacts in view of the effects at low temperature of the high-low junction contacts. This report describes the results of measurements of responsivity of extrinsic silicon infrared detectors near their ohmic contacts. These detector responsivity measurements were made by utilizing an apparatus developed at The Perkin-Elmer Corporation. This apparatus consists of a source of infrared radiation focused to a spot and mounted on a cryogenic x-y stage. The source of radiation and the cryogenic stage are mounted in the same low background photon flux and low temperature chamber as the detectors. The description of the apparatus and its characterization are also presented in this report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1978
- Accession Number
- ADA063823
Entities
People
- D. P. Mathur