Noncoplanar High Power FET.
Abstract
The use of low-doped tubs under the source and drain have significantly reduced the parasitic capacitances of a common-gate noncoplanar power FET structure. Submicron gate lengths were easily achieved with an etch and growth technique. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 27, 1978
- Accession Number
- ADA063956
Entities
People
- D. M. Collins
- R. Sankaran
- S. B. Hyder
- S. G. Bandy