Photoluminescence of Gallium Indium Arsenic Phosphide.

Abstract

This report is the result of an attempt to see what impurity levels and defect levels were present in liquid phase epitaxy GaInAsP epilayers grown on InP substrates. Hopefully, the material contained herein will aid the Air Force Avionics Laboratory in their search for GaInAsP samples sufficiently pure, perfect, and thin (0.4 micrometers) to use in the construction of improved microwave devices.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1978
Accession Number
ADA064066

Entities

People

  • Jamie G. G. Varni

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Band Gaps
  • Band Structures
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Cubic Lattices
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Laser Beams
  • Laser Diodes
  • Modules (Electronics)
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics